Design Of CMOS RF Trans-impedance Amplifier

Wireless communication has become the fastest growing and most widely used technology in the high technology field. However, in wireless communication system design, people get used to use voltage rather than current as the signal variable. So, the voltage-mode circuits have become the mainstream circuits design method. However, in the high-frequency and high-speed signal processing, voltage mode circuits can not meet the system requirements, and current mode circuits design method can solve these problems. Therefore, the last three decades, the current mode circuit design methods have seen significant development.How the voltage-mode and current-mode to full link up? This is a very important issue. The application of trans-impedance amplifier (TIA) is the key to solve this problem. Therefore, the study and improvement of the TIA in this field have important scientific and practical significance for the modern voltage and current mixed analog integrated circuits.In this paper, the TIA of the RF transmitter and the trans-impedance low noise amplifier (TILNA) of the ultra-wideband receiver are the research objects. Designing the circuits are based on the systematic analysis of RF transmitters and ultra-wideband receiver structure and performance metrics, following the working principle and technical parameters of the TIA of optical receiver and the LNA of the UWB receiver. A current-mode circuits designing method that was supported by National Natural Science Foundation of China (No.60776021) is adopted, a narrow-band TIA and a UWB TILNA are presented. The main works of this paper consist of following aspects:(1) Combining with the characteristics of electronic circuits and the characteristics of TIA in the optical receiver, we propose the new application of the TIA in current mode transmitter and UWB receiver.(2) A new 2.4GHz TIA is presented. This TIA only consists of two stages:the first stage is a basic trans-impedance structure; the second stage is cascode differential amplification structure. The RF gain control TIA operating at 2.4GHz, the input reflection coefficient S11 is-56.88dB, the output coefficient S22 is-36.99dB, the maximum gain achieves 18.27dB, noise figure is only 1.061 dB. The TIA works at 1.3V, the power dissipation is 6.38mW.(3) A variable gain TILNA working from 2-11 GHz frequency band is presented in this paper. This TILNA consists of two stages:the first stage is resistive current-feedback structure; the second stage is cascode structure. Controlling the resistive gain of the first stage and the bias current of the second stage simultaneously, it can achieve a continuous 26dB gain control range. When the gain is changing, the input and output matching will not be affected. Throughout the 2-11 GHz band, S11 is less than-10dB, S22 is less than-18dB, the gain is greater than 17dB, the noise is less than 3.8dB. The supply voltage is 1.4V, and power consumption is only 10.6mW, it achieves excellent performance.The simulation results show that it is more excellent than recently published CMOS designs.