Research Of InP HBT Device Single Event

Natural space radiation environment can lead to Single Event Effects in Spacecraftelectronics semiconductor device，which seriously affects the reliability and life of thespacecraft. Heavy ion single event experiments and simulation is one of the very importantmeans of study on single event effects. The reinforcement of semiconductor devices on asingle event effects has a very important significance on improving the reliability of thespacecraft.The mechanism of InP HBT single event transient effects caused by space radiationenvironment has been described in this paper. InP HBT devices for single event effects onphysical level have been simulated. Through a lot of simulation work, the sensitive area ofInP HBT has been found and how the factors, such as linear energy threshold, the incidentradius, depth of heavy ion impact on the effect has been analyzed. The SET of InP HBTunder different bias condition（s1V、3V、5V）, and different LET value（s0.1pC/μm~0.7pC/μm）have been simulated and the results have been analyzed. Moreover, we can get a transientpulse current source which affects circuit work through the physical level InP HBT devicesimulation. By adding the pulse current source in a digital circuit, the circuit-level singleevent effects can be simulated precisely.