Use Pulse Laser To Simulate Single Event Effects On Discrete Semiconduntor Device

Single Event Effect (SEE) is an common phenomenon in the space environment, when a single high energy heavy ions or protons, neutrons incident on the sensitive position of semiconductor device which are in spacecraft, the ionization effect will produce additional charges which will influence the logic state or output waveform of the component and even result in destroy of the device. Pulsed laser is an very effective way to simulate Single Event Effects which was rised in1980s, It has many benefits such as convenient, low cost, no need vacuum operation and many other factors.Variety of semiconductor devices and systems which are in the space environment will be impacted by Single Event Effects. And diode is the most simple semiconductor devices, therefore, to study its response of different parameters of pulse laser has very great significance.In this paper, we use pulse laser to simulate single event transient and do a series of experiments. We use femtosecond and picosecond laser to irradiate the pn-junction of the diode respectively, and collect the corresponding electric pulse of the diode in different reverse bias voltage and different laser energy. Besides, we analyse the relevance between electric pulse characters and the parameters of pulse laser.In addition, use an inverted fluorescence microscope to focused the light spot to about40μm, made it incident on different locations of the pn-junction and found out the region which had strong response to the same pulse laser. At last, we explored the correlation between the laser energy, wavelength and electric pulse of the diode.We set up experimental equipment for pulse laser simulate Single Event Effect. Afterwards, we use both inverted fluorescence microscope and two kinds of laser for more research, and obtain a series of conclusions which are useful for intensive study of laser simulate single event effect.