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A Reconfigurable Multi-band RF Power Amplifier Face To TD-SCDNA/TD-LTE/TD-LTE-A

Posted on:2015-01-03Degree:MasterType:Thesis
Country:ChinaCandidate:C P GengFull Text:PDF
GTID:2268330425976154Subject:Microelectronics and Solid State Electronics
Abstract/Summary:PDF Full Text Request
With the promotion and development of3GTD-SCDMA Technology LTE,as the continuous development of3G technology along with its high data rate, low latency,flexible configuration of broadband,has been the evolution tendency of the next generation of mobile communication technology.Howerver it brings various challenges in respect of size,cost,property of mobile communication terminal products after the introduction of TD-LTE.It requires to add not only operating frequency for supporting corresponding LTE mode on the basis of the original multimode,but also the working band frequency of international roaming in order to ensure that users can achieve roaming.RF Power Amplifier, as the main components of radio frequency front-end for wireless communication,has a key role in achieve the interconversion between RF signal and baseband signal.A Frequency-Reconfigurable RF Power Amplifier with multi-standard and multi-band has been designed satisfying quad-band,system linearity and efficiency.The paper first introduces the basic types of structure of RF power amplifier, including its performance parameters and circuit structure.The RF PA of this paper mainly consists of multiband input matching unit, the first level power amplifier unit, the interstage matching unit and the second power amplifier unit, the output matching unit and bias circuit unit. The paper,through the structure analysis of the RF power amplifier, first designed a wideband amplifier to meet the requirements in four frequency with input matching network, and then designed a switch controlling the output of the matching network, as well as the amplifying circuit provides the bias circuit, and the interstage matching circuit, thus constituted a complete multiband reconfigurable power amplifier.The circuit was designed by the integrated circuit simulation software in cadence Spectre RF environment.adopting the SIMC0.18um RF CMOS technology to accomplish the RF PA circuit design and simulation.Then the Virtuoso Layout Editor was used for circuit Layout design and optimization, after above process completed the Layout imitation.
Keywords/Search Tags:Multimode and reconfigurable, RF Power Amplifier, Bias Circuit, MatchNetwork
PDF Full Text Request
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