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The Simulation Of IGBT Modeling And Loss Based On PSpice

Posted on:2014-08-17Degree:MasterType:Thesis
Country:ChinaCandidate:H Y MuFull Text:PDF
GTID:2268330425480635Subject:Electrical engineering
Abstract/Summary:PDF Full Text Request
The power semiconductor device is an important part of power electronicsand advances the development of power electronics technology. Insulated-GateBipolar Transistor (IGBT) is a kind of power semiconductor devices which iswidely used in machine control. It has the advantages of MOSFET and bipolarpower transistor. The efficiency of electronic circuit mostly depends on thepower loss of devices. The increase of switching loss will cause the permanentdamage when IGBT works in a high frequency, so it is very important to researchthe power loss of IGBT.Computer simulation is based on the theory, the numerical analysis and thecomputer. It can shows characters of circuit authentically. The structure of systemcan be improved and optimized by establishing the simulation models andanalyzing the output information. There is no IGBT models in commonsimulation software, but PSpice can use some basic device models to establishIGBT models and will get a more accurate simulation result compares with othersoftwares.This thesis firstly retrospects the development of power semiconductordevices, and introduced the domestic and overseas present situation of IGBTmodeling and loss analysis, analyzed the structure, characters, work principle anduse prospective which lay the foundation for establishing IGBT models. Thisissue stressed on the PSpice software as the simulation software, establishedIGBT static and dynamic models, particularly analyzed the structure andparameters configuration, thoroughly analyzed and calculated the power loss ofmodels. Compared with IRGSL30B60K which is the real device of IGBT bydatasheet, test wave form mainly coincids with data. Thus the correctness andreliability of models can be confirmed. In conclusion, it illustrate that IGBT models designed in this issue had already achieved the expectation aim. It can beused in the IGBT’s testability fabrication and the research of the structure,characters and circuit system of practical IGBT. Finally, this dissertation raises abasic method to lower the IGBT power loss. We can seek for the maximumefficiency of the system by doing constant-current charge experiment.
Keywords/Search Tags:PSpice, IGBT modeling, simulation, power loss
PDF Full Text Request
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