Research On High Power And Low Loss Trench Gate IGBT Devices

Insulated Gate Bipolar Transistor(IGBT)is a high voltage and high-power semiconductor device with higher price ratio than power MOS and BJT.It is widely used in medium and high-power applications.Due to its conductance modulation effect on the drift region in the open state,this kind of device can achieve both high voltage resistance and low on-loss.However,the reverse pumping and recombination of a few carriers exist in the drift region of IGBT device during turn-off,which will lead to a high turn-off energy loss.Therefore,improving the contradiction between IGBT forward voltage and turn-off energy loss has always been one of the research hotspots of IGBT.A Hybrid p⁺/n Collector(Hybrid p⁺/n Collector,HC)Fin P-body IGBT(Mesa structure)device is proposed in this paper.The HC structure can ensure a high efficiency of hole injection when it is on,and can quickly drain the holes in the drift zone when it is off.The Mesa structure can improve the hole concentration at the emitter side in the on-on state,and achieve a lower positive on-guide voltage.The HC-Mesa-IGBT,which integrates the advantages of the two structures,has a better trade-off relationship between the forward conduction voltage and the turn-off energy loss.The simulation results show that when1200V rating and With V_on at 1.5V,compared with HC-IGBT and Mesa-IGBT,the E_off of HC-Mesa-IGBT is reduced by 26%and 54%,respectively.and the manufacturing process is almost no more difficult than Mesa-IGBT.The main work of this paper includes:Firstly,the development background,basic structure and working principle of IGBT are introduced.Secondly,a new 1200V-30A low loss slot gate HC-Mesa-IGBT device structure and manufacturing process were designed,and a detailed theoretical analysis and calculation were carried out.Finally,process simulation and device simulation are carried out based on Silvaco TCAD.The electrical characteristics of HC-Mesa-IGBT,HC-IGBT and Mesa-IGBT were compared,and it was proved that the designed HC-Mesa-IGBT has better performance than HC-IGBT and Mesa-IGBT.