Research On A New Structure Of Low Power Loss IGBT

A new structure of IGBT has been discussed in detail in this thesis. In the new structure, a n+ buffer layer is introduced into the bulk silicon substrate with a triple-diffusion process..The new structure has two features :one is the feature of NPT-IGBT : the thin and lightly-doped p+ layer and the high lifetimes of the carriers; the other is the feature of PT-IGBT :n7n+structure which can make the n" region very thin . The new structure is neither the NPT-IGBT nor the PT-IGBT . We call it :LOWPOWER LOSS IGBT------LPL-IGBT . Experimenal results and simulationresults have shown that this new structure provides a better performance than that of the conventional NPT structure. Its power loss is lower than NPT-IGBT and other parameters are the same as those of NPT-IGBT. LPL-IGBT has reached a new level and has a bright futuer in the applications. It will have a prominent status in the family of power devices.