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Simulation Study Of IGBT Model

Posted on:2011-04-13Degree:MasterType:Thesis
Country:ChinaCandidate:F ZhaoFull Text:PDF
GTID:2178360308973461Subject:Electrical theory and new technology
Abstract/Summary:PDF Full Text Request
Recently power electronics technology's rapid development promotes the growth of power electronic devices. Computer simulation makes power electronics'study less expensive and less time wasting. The key of computer is modeling. As the new power electronics device, there is IGBT model in current emluator(such as Pspice) ,so it's useful to build IGBT models in Pspice.The paper introduce IGBT's characteristic which give a theory base to model IGBT. From semiconductor equation we can obtain IGBT math-physics model. Math-physics is complex and some equations have logical expressions, but Pspice can't realize logical expressions. To be equivalent to ABM models ,the paper uses mathematical method to make logical expressions be equivalent to Pspice's need, and then realize Math-physics model in Pspice. The work extend IGBT math-physics'use area.By simulating IGBT work characteristic and combining method ,the paper has built a simple model of IGBT. It offered convenience of circuit simulation.By simulation comparing, we can improve the model's efficiency. Math-physics model realize quite precision, it is fit in precise ask. Simple also realize some precision and it's fit in circuit simulation.
Keywords/Search Tags:IGBT math-physics model, Pspice, Saber, bipolar transition equation
PDF Full Text Request
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