Driving And Protecting Circuit Design About The1700V/2400A IPM

IPM (Intelligent Power Module), integrated with IGBT(Insulated Gate BipolarTransistor), gate driver circuit and a variety of protective mechanisms, is smaller in volumeand weight while the integration degree and stability is further improved, compared to theIGBT module. IGBT has the advantages of high current, low saturation voltage and highvoltage in GTR(Giant Transistor), as well as the advantages of high input impedance, highswitching frequency and low driving power in the MOSFET (Metal Oxide SemiconductorFET). At the same time, IPM internally integrated logic, control, drive, detection andprotection circuit, so it not only reduces the volume of the system and shortens developmenttime, but also avoids the instability of the system caused by the system developers who arenot familiar with IGBT performance. It increases the reliability of the system and is thedevelopment direction of power module. Low-power IPM has been widely used in homeappliances and other fields. Medium and high power IPM has became the core component inareas such as wind power, photovoltaic power generation, electric vehicle and other new fieldof energy and electric traction, high-speed railway, urban rail transit and other fields.First of all, this paper describes the structural features and operating characteristics onIGBT. Based on the performance requirements and its market position of1700V/2400A IPM,we present the structure of IPM, and design the overall scheme of driving and protectingcircuit. And then, it gives deep research and analysis on driving circuit, and describe in detailwith the gate driving method and drive voltage selecting principle. After it, we give thecalculation method of gate resistance and drive power, design the gate driving output stagecircuit on the structural characteristics of the1700V/2400A IGBT.High-voltage and high-power IGBT puts forward higher requirement for isolation ofdriving signal and driving power. In order to meet the requirement, we give the correspondingsolutions after analyzed the advantages and disadvantages of the various signal isolationmethod on isolation performance, cost, and applications. The switching of the high-powerIGBT requires more power, so we should design a gate driving power with high isolationvoltage. After analyzed some drive power transmission method, we design the gate drivingpower circuit. Finally, we test the gate drive output stage circuit, signal isolation circuit anddriving power circuit and get the appropriate parameters that achieve the expected results.During IPM operating process, some failure will happen for various reason, thesefailures include overload and short-circuit, over-temperature, over-voltage. This paper makesa simple analysis on the reasons of the problems, and then gives the corresponding solutions.