Design And Implementation Of Monolithic Silicon Optoelectronic Integrated Circuit

The optoelectronic integrated circuit (OEIC) is a new device that combinessemiconductor-photoelectric devices and micro-electric devices on the same chip.Furthermore monolithic silicon OEIC combines the semiconductor-photoelectricdevices and micro-electric devices on the same wafer. As OEIC has the advantage ofcancelling the influence of parasitic parameters in traditional IC, minishing theconstruction link of the different hybrid electric circuit，improving the credibility andspeed of the integrated circuit, it is widely used in fiber-optic correspondence, CDstoring system, medical system, laser guidance and optical detection system etc. Andrelying on its low-cost, mature production process and less parasitic parameters, themonolithic silicon OEIC is increasingly favored by the market.This thesis aims to design an OEIC, which includes two areas: a photoelectricdetector, and OEIC circuits. The former is the core of the entire OEIC design in thisthesis, its role is converting the incident optical signal to a low-noise, high-amplitudecurrent signal. Then the latter processed and amplified the current signal generated fromthe photoelectric detector. Ultimately, the OEIC generates a stable voltage signal for thepost stage digital circuit processing.In this thesis we have designed a kind of double-layer anti-reflection layer structureand three types of PIN silicon photodetectors with standard Bipolar Process.Anti-reflective-layer’s antireflection effect can reach about90%in the near-infraredbands. The three photodetectors have their own advantages, the operating wavelength ofthem is basically from800nm to900nm. When the reverse bias voltage is0.7V, theepitaxy concentration is1×1014cm-3and the epitaxial thickness is8um, thephotodetector’s peak responsivity reached about0.45A/W to0.58A/W, the bandwidthreached30M to2GHz, reverse dark current reached1×10-10A/um, and reversebreakdown voltage reached35V. The OEIC has the advantages of high responsiveness,high bandwidth and low dark current. In addition, the thesis also specifically addressedthe OEIC production process and the corresponding mask using in process. The thesis also proposes a OEIC circuit design consisting of precedingtransimpedance pre-amplifier and post-stage voltage amplifier. The transimpedancegain of pre-amplifier reaches85db. So it can convert the current signal into voltagesignal efficiently, post voltage amplifier has characteristics of high-bandwidth, it furtherenlarges the voltage signal. The input pulse photogenerated current range which thecircuit can process is from0.02to3μA and the relevant post-stage output voltagechange amount from0.0115to2.8V; entire OEIC circuit gain has reached118dB, andbandwidth has reached98MHz.