Research On Temperature Of MOCVD Reactor

MOCVD (metal organic chemical precipitation) is a large-scale equipment for the production of light-emitting materials. The silicon substrate grows in the environment of the reaction chamber into light emitting material. In the growth process of the silicon substrate, the temperature influence is particularly important. Uniform temperature distribution, as the final decision on the luminescent properties of the material, directly affects the consistency of the quality and thickness of the light emitting material in the thin film deposition.First of all, this paper, based on theories, uses COMSOL, finite element analysis software, combine application of heat-electrical coupling module and conjugate heat transfer module to simulate the graphite disk surface temperature field changes under a variety of structural parameters. Outcome of the simulation turns out to find that heating resistance wire arrangement, the distance between the base and the resistance wire, the distance between the base and the spray head, the position and the height of the reflection plate, the heating power and the gas inlet flow rate, all have an impact on the temperature field distribution. According to the evolution of the impact, find the law and provide a theoretical basis to the structural optimization of the reaction chamber.Secondly, integrate the sub-block optimization parameters for the preliminary devise of the structure of the reaction chamber. Using COMSOL to simulate the temperature field in the structure, find that there is still inadequate of the structure. According to the calculation results, put forward five optimization schemes, make out the final design of the structure and parameters to provide the silicon substrate a suitable growth environment of the reaction chamber.Finally, the final design of the reaction chamber cavity practical has been test on the37×2"MOCVD equipment. Quality of the light-emitting material which is produced by the test equipment is good, thickness of the layers of the wafer distributes uniform, and the wavelength of every wafer and between wafers up to455 ±3nm.