| Wafer temperature uniformity is one of the major factors effecting etch performance. Several factors influence the temperature uniformity. In order to achieve the desired temperature uniformity on the surface of the wafer, it is essential to understand the thermal behavior of the various components of the metal etching system Experimental data of this study is obtained by the DPSII (De-coupled Plasma Source) system which is an etch process chamber that uses two independent RF power subsystems namely source RF and bias RF.; The design of high temperature cathode for DPSII chamber equipment requires a comprehensive modeling to explain heat transfer, thermal stress, plasma physics, electromagnetic and topography phenomena existing and taking place in the system. The numerical model carried out in thermal finite element analysis allow us to gain in-depth understanding the thermal performance of the ceramic high temperature cathode components and parameters, and provide a better understanding to analyze the effects of design changes (dimensions and materials) over the thermal uniformity of the electrostatic chuck surface and on the wafer. Thermal modeling and simulation, instead of the traditional trial-and-error method, is an effective tool that helps to reduce the number of design cycles and considerably affects the product excellence by providing innovative solutions in a shorter time-span.; A simplified two-dimensional axisymmetric thermal model of the High Temperature Cathode and DPSII chamber was developed using commercially available finite element method (FEM) code ANSYS in order to determine the factors that affect the temperature uniformity on the wafer. This research was carried out in order to understand the role of each factor and how the factors are interconnected on the wafer temperature uniformity. |
