The Research And Design Of X-band Power Amplifier

The X-band continuous wave solid-state power amplifier in this paper is animportant part of satellite ground stations. Its function is amplification. And it is mainlyused for the uplink of satellite links. In order to meet the actual needs of the TT&CTechnology, the output power must be high, consider the cable loss, air loss, combinerloss as well as a certain degree of redundancy, several power amplifier module synthesisare required and with20W power amplifier as the pushing stage. This thesis is topromote research and design to produce the product of latter.The amplifier for communications requires high linearity, so amplifier is designedto work at Class A to ensure that the requirements of linearity. Three stages are used toensure the high gain. The power GaAs FET within internal match network is chosen tosimplify the design. Power amplifiers’ overvoltage protection, overcurrent protection,temperature protection, over input protection features are implemented through thedesign of the control circuit.According to the customer’s indicators and appearance requirements, GaAs FET isoutstanding. ADS is used to chart circuits, the CST to cavity structure, AutoCAD tocavity making, and Protel to PCB. Commissioning and measurement of the poweramplifier are completed.Final results are as follows, frequency range7130MHz to7245MHz,1dBcompression point output power≥20W (43dBm),1dB compression point power gain≥47dB, gain Flatness≤1dB, the gain smoothness≤±0.2dB/10MHz, the third-orderintermodulation (input two intervals5MHz signal, P1dBrollback of7dB)≤-30dBc,harmonic≤-45dBc. The amplifier’s PAE is greater than17%.This paper first introduces the application and development of the power amplifier,and then design theory is analyzed, and then elaborate the design process, and finallygive the product with the measured data results and make a summary of the entirepower amplifier design.