| Microwave solid-state power amplifiers are applied to modern satellite and mobile communication,radar,electronic warfare and various electronic equipments.It is taken as the key parts of transmitter systems.It amplifies the input signal,and suppresses the out band noise.With the development of personal wireless communication and military standard,there is urgent demand in specifications of microwave power amplifiers,higher output power and efficiency,better reliability and small mass.In satellites,microwave solid-state amplifiers are the typical product.It has been used widely in military/civil communication transponder,navigation satellite transponder,relay Satellite transponder,high speed data transmission system in remote sensing satellite,microwave remote sensor and so on.GaAs components is the widely used in microwave power devices.It has advantages of low noise,high power gain,high efficiency,low power consumption.In this paper,a S-band space borne 10 W power amplifier is designed.ADS,autocad and Pro/engineer are used to realize the EM simulation,total layout and three-dimensional design.The thesis contains six chapters.The first is introduction.The chapter 2 describes the definition of smith chart,and the principle of the matched circuit.Chapter 3 states the working principle of the GaAs MESFET,and shows the key specification of power amplifier.The stability of the devices is also given in this section.Chapter 4 demonstrates the design of proposed power amplifier and reliability of the critical specification.Chapter 5 introduces the measured method of the amplifier,and plots the final measured result.Final chapter is the conclusion. |
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