Design And Manufacture Of The Test Instrument For HVIGBT Dynamic Characterization

Nowadays,as the global energy shortages and environmental degradation havebecome increasingly prominent,power semiconductor devices represented by IGBT iswidely used in aerospace, transportation, green lighting, intelligent home appliances,ac motor and other fields with its excellent performance. IGBT is developing to highfrequency, high temperature, high pressure and high power constantly, while theswitching loss of IGBT seriously restrain the rise of the switching frequency, theVoltage current overshoot caused by the larger du/dt and di/dt will lead to thereliability of the application circuit drop, at the same time, it will also bring a lot ofelectromagnetic pollution. But a reasonable testing technique of IGBT, can not onlytest IGBT device parameters accurately,but also get the influence of circuit parameterson device characteristics in the practical application, to optimize the design of theIGBT devices. So IGBT characteristics test is becoming a research focus in the fieldof power electronics.This paper designed a IGBT dynamic parameter test instrument, which can testthe switch characteristic and short-circuit characteristic of the module or single pipe ata maximize of3.3kV/400A IGBT.The Test voltage is up to2500V and the current isup to2000A. Firstly, this paper researches the working principle and characteristics ofIGBT, and then focuses on the physical mechanism of the dynamic characteristics ofIGBT. Subsequently, it makes a study on the principle of the dynamic characteristicsof a high voltage IGBT test, and analysis the function requirements of dynamiccharacteristics of IGBT test.Based on functional requirements,this paper designs aprinciple diagram of the test, after derivation and calculation, determines theprinciples of components selection and the function of each part of circuitimplementation. This instrument design uses the laminated busbar to replace thetraditional wiring method. After research the design methods in a low stray inductance，through research and analysis to avoid the bad busbar design, this paper finallydetermine the best busbar design according to the requirements.The instrument designs a gate drive pulse generator used to Dynamic parametertest for power device.In view of the Gate drive requirements in the process of thedynamic parameter test of IGBT and based on the requirements of double pulse testmethod in the switching characteristics tests,this instrument design a logic pulsesignal generator based on the STC89C52single chip,which is able to output single pulse or double pulse according to the requirements of the test, and adjust pulse widthand spacing according to the actual device test requirements. Finally, the paper studiesthe function and peripheral circuit design methods of IGBT driving circuit, with twodrives produced by CONCEPT company, complete the design and production ofperipheral drive circuit and the power module eventually.The instrument conduct a dynamic parameter test for a FZ400R17KE3IGBTmodule produced by INFINEON company after the completion of the assembly,andcompare with the original dynamic parameter testing instruments in lab.The resultsturns out that,the instrument designed in this paper can realize the function expectedcompletely, and it is better than the original instrument in lab obviously, and thevoltage overshoot is not significant when the IGBT turns off,the process of testing issafe and the results is accurate.