Design And Fabrication Of Integrated Passive Filters On Silicon Substrate

As the critical components of passive devices in system integration, with the development of system-level packaging technology, the new technology of silicon-based Integrated Passive Device(IPD) has been widely concerned, inductor, capacitor, LC filters and other passive device have been integrated on silicon. However, silicon substrate losses and metal layers losses seriously affect the performance of silicon passive components, which makes how to reduce losses to improve the performance of devices become the focus of research about IPD technology.Based on the comprehensive analysis of all kinds of methods how to reduce silicon substrate losses and metal layers losses, four filters were produced by using spin coating low-permittivity dielectric layer on high resistance silicon and thick metal wire electroplating. First of all, model parameters of inductor and capacitor were extracted according to component structure. Then, trends effect of the thickness of dielectric layer and metal wire layers, and other structure parameters have been obtained by analysing the3D model of inductor and capacitor with3D electromagnetic simulation software HFSS. And according to the analysis of the impact of the trend, combined with filter equivalent circuit model, designed layout structure and process of butterworth low pass, high pass, band pass and band rejection filter, and the design of the filter has been verified with HFSS simulation. Finally completed the four filters through technology of IPD, devices testing results of the sample show that testing results and simulation curve is consistent. The optimized results show that15microns dielectric layer and10inicrons electroplating metal wire can effectively reduce losses and improve the performance of silicon-based passive filter.In this paper, the research shows that simulation results of silicon-based filters meet technical requirements by using3D electromagnetic simulation software HFSS. The similative curves accord with testing results, both of them achieved required targets. The aim of the combination of design and technics has been realized.