On The Performance And Characteristics Of The Organic Field Effect Transistor Memories

Organic electronics has many advantages in flexible, low price and large area application overtraditional inorganic electronics. Organic field effect transistor memory is a very important part ofthe organic electronics and attracts many interests.The evolution, classification, and work mechanism of the OFET memory are reviewed. Theexisting problems for future research are discussed. We have fabricated two different types of OFETmemories and developed specific measurement programs for organic memories.(1) An OFET memory with PMMA electret layer and the Pentacene semiconducting layer isfabricated. Its working mechanism and performance are discussed. A memory window of80V,a20000s retention, and switch cycles are obtained. Thinner PMMA layer results in largermemory window, as long as the PMMA film is smooth. The performance of the device keepsstable in high and low temperature conditions and has a bright future in commercialapplications.(2) Two OFET memories with Nano-particle floating-gate layers are fabricated and theirperformance is discussed. The memory window, retention, and switch cycles of each memoryare analyzed. The performance of the devices are effected by the condition of the Nano filmsand can be enhanced by fabricating smoother films.(3) Two programs for OFET memory and OBD measurement are developed respectively. Most ofthe measurements of the organics memories can be performed by the two programs whichsimplify the characteristic process of organics memories.