Study On Organic Nonvolatile Transistor Memories Based On Organic Molecular Floating Gate

Memory device is an essential component in many of electronic devices for data processing, storage and communication. Organic nonvolatile memory devices have recently attracted great research interest because of the huge demand for smart, flexible, printable, and disposable electronics. Especially, Organic field-effect transistor(OFET) type memories received the most noticeable attraction due to their easily integrated structure, non-destructive readout, and multibit storage in a single transistor.To realize high performance such as high-density and nonvolatile OFET memory devices, organic molecular floating gate memories have been used in recent years. Molecular materials that are on the order of 1nm in size represent idealized charge storage elements which with small carrier state densities and high charge carrier binding energies. Small molecules have many advances, such as easy purification、no batch-to-batch variation、well-defined molecular and electronic structure and so on. Particularly,small molecules can be designed in terms of the unique molecular structure, tunable bandgap, and flexible synthesis.Compared with polymer, small molecules can be designed more flexibly, but there are scarce small molecules designed to store charge firmly as non-volatile memory materials.This work successfully demonstrat the organic field-effect transistor memory devices based on a small molecule material named SFDBAO. This device shows a high performance with a large memory window as 146 V, excellent retention time over 5×104 S with high ON/OFF-current ratio(2×105), and stable reversibility over 100 cycles without decay. According to our results, SFDBAO is proved to be a good material for holes trapping, and PS can be used to suppress the charge leakage effectively. These results demonstrate a bright future of small molecular materials in high performance non-volatile memory.