Study On Performance Of Solution Processed Hybrid Molecular Floating-gate For Flexible And Low-voltage OFET Nonvolatile Memories

Flexible devices have attracted widely attention due to their potential in mechanical flexibility,low-cost,lightweight,low-temperature processing.In order to prepare a memory based on low-voltage transistors,a suitable storage material and device structure are researched.It is found that some storage materials such as metal nanoparticles and small molecule semiconductor materials can perform a large memory window and long retention time at low voltage,however,it is difficult to achieve the erasing process at a negative breakdown voltage.In order to achieve the preparation of a memory with good performance,double floating-gate materials have been applied in flexible low-voltage OFET memory.The applied of double floating-gate makes the erasing process easy because the positive holes can inject into the memory layer and recombine with stored electrons in the LUMO energy level eventually.In the device using double floating-gate,it changed its memory feature from a write-once-read-many(WORM)type to a flash type and even to be ambipolar trapping as the storage material content increased.Besides,good mechanical stability can be achieved even after 1000 bending cycles at a bending radius of 3.5 mm.