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The Research And Design Of UHF Band Wireless Transceiver Front-end

Posted on:2014-02-28Degree:MasterType:Thesis
Country:ChinaCandidate:Q F ZhangFull Text:PDF
GTID:2248330395483865Subject:Integrated circuit engineering
Abstract/Summary:PDF Full Text Request
Ultra high frequency (UHF) band plays a vital important role in wireless communicationtechnology, which is greatly demanded in current years and in the future. Because thedevelopment of radio frequency (RF) transceiver is moving towards low power consumption andhigh integration, systems on chip (SOC) proves to be the most desirable solution. As a result, thefront-end transmitter and receivers based on RF Complementary Metal Oxide Semiconductor(CMOS) process come to be the main trends to realize the SOC. However, many disadvantagessuch as low carrier mobility, high substrate loss, and passive components with low qualityfactors have limited the applications of CMOS technology in radio frequency, which makes theRF front-end transceivers become bottlenecks of the SOC. Therefore, the research of how toadopt new circuit design technology to promote the performance of the system is a hotspot anddifficulty at present.Frameworks of RF transceiver, including super heterodyne, zero intermediate frequency anddifferent receiver structures are introduced. Hartley receiver and Weaver receiver are analyzedand compared to improve the image reject. Moreover, working principle and performancecharacteristic of low noise amplifiers, mixers and power amplifiers are studied, which are all keysub-circuits in RF transceiver. Finally, a low noise amplifier, an up-conversion mixer, a powerpre-amplifier and a down-conversion mixer are designed on the basis of SMIC RF0.18μmCMOS process. SPRCTRE simulator in CADENCE is used to design and simulate each module,and ADS simulation software from Agilent is adapted to impedance matching. Then, accordingto the criterion of RF circuit layout design, the whole layout is proposed in Virtuoso, in whichthe power pre-amplifier occupies an area about0.454mm~2.and the low noise amplifier occupies0.439.mm~2.The up-conversion mixer occupies0.14mm~2and the down-conversion mixeroccupies0.252mm~2.In line with the simulation results, when the low noise amplifier operates at2.4GHzfrequency, the input reflection coefficient S11is-19.63dB, noise figure is2.4dB, gain is24.8dB and power consumption is about8.1mW. Meanwhile, the down-conversion mixer shows14dB conversion gain,14.5dB noise figure and-17.9dB input power at1dB compression point. thedown-conversion mixer shows11.35dB conversion gain; As for the power pre-amplifier, theinput reflection coefficient S11is-16.77dB, output reflection coefficient S22is-17.34dB,power gain is21.77dB, output power at1dB compression point is3.57dBm, powerconsumption is27mw and power additional efficiency is8.3%.
Keywords/Search Tags:UHF transceiver, LNA, Mixer, Pre-PA
PDF Full Text Request
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