Research On CMP6H-SiC Crystal Substrate（0001） C Surface Based On Abrasive Alumina（Al₂O₃）

Silicon carbide crystal substrate is the most promising semiconductor materials, has been widely used microelectronics photonics, semiconductor lighting, integrated circuits, and so on. With the rapid development of the light emitting diode (LED), the requirement for high surface quality of Silicon carbide crystal substrate keeps continuous increasing. At present, chemical mechanical polishing (CMP) is a practical method that can realize global planarization. The study on silicon carbide chemical mechanical polishing technology is of importance for both theoretical guide and practical application. In this paper, some methods has been used, such as orthogonal experiment, single factor experiment method and poor analysis. The chemical mechanical polishing tests have been done on silicon carbide crystal substrate. We introduce and analysis the removing principles of the grinding paste. At the same time, we optimize the grinding paste ingredients. In the,we can increase the material removal rate,and improve the surface quality of the processing.This paper adopts on chemical mechanical polishing process program to ZYP300type polishing machine for experimental platform of Silicon carbide polishing, research on single crystal slice parameters. This paper adopts on containing Al2O3developed by WO.5, W1,W1.5, W2.5and W3.5, the polishing liquid for polishing process tests, the content of the oxidizing agent, the content of the dispersant, the content of the abrasive and the polishing pressure, polishing wheel revolving speed, grits factors such as particle size of the influence law of polishing process. And polishing liquid formulation optimization experiment, using the orthogonal method got polishing efficiency is higher, the good performance of polishing liquid.