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Lapping And Polishing Research On Semiconductor Laser Chip

Posted on:2014-09-09Degree:MasterType:Thesis
Country:ChinaCandidate:H F ZhaoFull Text:PDF
GTID:2268330425993097Subject:Optics
Abstract/Summary:PDF Full Text Request
At present in the semiconductor laser preparation, the thickness of the epitaxial wafer needs to thin to some degree. The back of the substrate after lapping exists on surface damage layer, the residual stress will make the epitaxial wafer bending deformation and easy to be cataclastic in subsequent process, thus affecting the rate of finished products. Therefore,after lapping process, the ohmic contact resistance and device heating will be reduced. After polishing process, the chip surface roughness decreases, and improve the metal adhesion, and ultimately achieve the semiconductor laser performance improvement.This paper firstly established by lapping and polishing of particle micro polarity model, and then the vertical benign to reduce thin were improved, and the mechanics and kinematics analysis, put forward by thinning the pendulum vertical vital feed principle, polishing take chemical mechanical polishing principle, combined with the optimization of the process can improve the quality of the semiconductor laser chip. Finally verified by experiment with the theory and process production gallium arsenide semiconductor laser chip is a certain technical support.The experiment used instrument is the Logitech company PM5type grinding and chemical mechanical polishing equipment, the use of step instrument, probe machine test results, and carries on the comparison, the comprehensive evaluation results are given.
Keywords/Search Tags:LD, GaAs, Lapping, Polishing, Chemical-mechanical polishing, Ohm resistance
PDF Full Text Request
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