Research On 300mm Wafer Chemical Mechanical Polishing Process Recipe Parameters

Chemical mechanical polishing(CMP) has been considered as a global planarization technology of wafer in IC manufacturing. When device size is under 350 nm, CMP technology must be used in order to meet the ultra-large-scale integrated circuit(ULSI) manufacture need,CMP process is widely used in 300 mm wafer fabrication process.Accurate control of CMP process depends on experience accumulation and understanding of CMP mechanism. With the decreasing of device feature size and the increasing of integration level of IC chipset, CMP technology is more and more critical during wafer fabrication. During the process of the CMP technology, we need to perform design of experiment(DOE) to determine the best known method of CMP parameters.(1) Use Applied Materials LK prime CMP tools to process 300 mm TEOS test wafers for CMP process design of experiment. Determine the best know method CMP process parameters for wafer production. From the experiment result we know when the head zone pressure increase, materials removal rate also increase. The best know method pressures are P1=7.1psi,P2=3.5psi-5psi,P3=4.5psi,P4=4.5psi,P5=4.1-4.5psi.(2) Use the DOE test get the best known method head rotation speed and platen rotation speed. When head rotation speed=65rpm/min and platen rotation speed=65rpm/min, materials removal rate and non-uniformity have the best result.(3) Use the slurry flow rate DOE test get the best slurry mixing rate and slurry flow rate. When slurry A is at 120ml/min and slurry B is at 180ml/min,the best materials removal rate and non-uniformity are achieved.(4) Get the best known method of head and pad conditioner sweep profile,use them in CMP production. When head sweep distance is from 6.3 to 7.3inch,pad conditioner sweep profile is 6 to 8.6 inch,the material removal and non-uniformity has the best result.According to all the DOE results above,choose the best know CMP process parameters to get the ideal material removal rate and non-uniformity results during 14 nm technology wafer production.