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Experiment Research On Particles Movement And Material Remove In Chemical Mechanical Polishing

Posted on:2016-04-22Degree:MasterType:Thesis
Country:ChinaCandidate:G C LinFull Text:PDF
GTID:2308330503456340Subject:Mechanical engineering
Abstract/Summary:PDF Full Text Request
With the development of Informational Technolog y, the precision of semiconductor manufacture is increased. Chemical mechanical polishing(CMP) has become an important method in semicon ductor manufacturing and it is widely applied in variety semiconductor manufacture process, such as CPU, hard disk and LED. CMP is the only method to access overall and local planarization and it can be applied to various materials. The process of CMP is very complex and its mechanism remains uncertainly. Experiment research on particles movement and material remove in chemical mechanical polishing helps to understand the material removal mechanism and the formation of super precision surface.The silica particles movement in slurries different concentrations of K2SO4 is in-situ observed with a self-developed fluorescence experimental system. The result shows that the velocity of particles decreases with the increasing concentration of K2SO4. By observing the surfaces of wafer and polishing pad, it is found out that the absorption and agglomeration of particles become serious.Nine kinds of polishing slurries of different K 2SO4 concentration were used in actual sapphire CMP experiment. The experiment result indicate that with increasing concentration of K2SO4, the material removal rate of sapphire and the coefficient of friction between wafer and polishing pad would increase. When the concentration of K2SO4 is over 175 m M, there are serious scratches on the surface of wafer.A model considered the interface forces among the glass wafer, polishing pad and particles surface is built to explain the behavioral differences of polishing particles. Based on this model, the particles velocity was calculated. The calculated result is close to the experiment result. It is indicated that the model can describe the experiment situation and it can be a guidance to actual CMP process.
Keywords/Search Tags:Chemical mechanical polishing, Ionic strength, Double electrical
PDF Full Text Request
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