Research For Chemical Mechanical Polishing Solution Based On Fenton Reaction For Single Crystal SiC

With the rapid development of the semiconductor industry and computer technology, the request for the chip substrate that can work under harsh conditions(high temperature, high-frequency, high-current,high radiation intensity) become more and more urgent. SiC is a third generation semiconductor materials which have efficient thermal conductivity, small dielectric constant, high radiation tolerance and good chemical stability and so on characteristics, is very suitable for producing high frequency, high integrated,high power electronic components that can work under high temperature, strong radiation environment, has far-reaching broad application prospects in LED lighting, astronautics, automobile electronics, computer chips and so on, and has been widely noticed and researched.The manufacturing technology of SiC monocrystalline materials is mainly consists of two parts:1. The growth of crystal,2. The cutting and chip manufacturing of wafers. This two parts is essential to the form and use of wafers.In order to realize the excellent characteristics of SiC monocrystalline materials fully, the super-smooth, no defects, no damage surface and no damage subsurface wafer is required. Such a request can be realized only with the support of advanced processing technology technology and effective manufacturingtechnology, as a result, this two technologies is the key of the application of SiC monocrystalline materials.Since the hardness of the monocrystallineSiC is large, Moh’s hardness reaches 9.2, monocrystalline SiC have the second hardness in nature, only a little softer than diamond. And SiC has big brittleness, but the bending strength and the tensile strength is not big. SiC has good chemical stability, it is difficult to react with other materials and corrode by acid and alkali. As a result, it is very difficult to process SiC, the processing efficiency is low, and it is also difficult to ensure the integrality of wafer surface and subsurface of SiC after processing. So realizing the super smooth and flat of SiC surface is the crucialtechnology point and important research direction of manufacturing SiC materials chip substrate in the future.This paper explores the effectiveness of improving the surface quality after polishing and the material removal efficiency while using Fenton reaction to corrode the surface of SiC in chemical mechanicalpolishing(CMP) though system verification and comparative experiments. And according to use the existing CMP experiment device under the same process parameters, by the way of 1. Change the form and price of catalyst Fe in Fenton-system polishing liquid.2. Change the species of acid and alkali and pH value of polishing liquid.3. Change the species and the size of abrasive particles in the polishing liquid.4. Change the quality percentage of abrasive particles in the polishing liquid. And optimize polishing liquid through the detection of polishing effect and material removal rate of single SiC wafer surface after polishing, then make the chemical polishing liquid which is suitable for polishing SiC wafer.Through the research of experiments and the processing principle of SiC wafers based on Fenton reaction polishing solution analyze the corrosion and the subsequent material removal mechanism of SiC materials, explored the role of Fe catalysts in polishing solution based onFenton reaction and the catalytic reaction process,Qualitatively researchedthe cause of influence on effect and efficiency when using different Fe catalystsfor polishing and then establish the theoretical model,discussed the flexible cushion effect mechanism of Fe catalyst in the form of Fe powder in the polishing solution, theoretically demonstrated the possibility of the use of home made polishing solution in cluster magnetorheological chemical polishing. And by comparison with the results of system processing experiments, conflrmedthe polishing solution based on Fenton reaction is available to improve effect and efficiency in the chemically mechanical polishing of monocrystalline SiC, and it can realizesub-nanometer even atomic-scale flatness of monocrystalline SiC efficiently.