| Creep and electrical movement of solder usually occurred in high power semiconductor lasers and linear-array semiconductor lasers packaged with soft solders such as In solder is relatively weak in enduring fatigue in device.Au electrode atoms into In solder layer may be caused its failure,after the device works long time,which would seriously influence the performance and lifetime of semiconductor laser.Study on the thermal characteristics of high power semiconductor lasers has been persent in this work. The finite element analysis software of ANSYS and AuSn alloy solders structures have been researched theoretically and experimentally in detail focused on 808nm semiconductor laser. Main works are summarized as the following. 1) Simulation temperature distribution within the finite element analysis of 808nm semiconductor laser welding by different methods and solder with ANSYS software,and discusse the result.2)We used the structure by AlN ceramic plate used as matching submount between laser chip and copper hear sink and AuSn alloy as solder. An acid electroplating solution of Au was prepared and the electroplating equipment was designed and set up based on our lab. The optimal conditions for uniform and smooth thick Au electroplating with acid solution were studied, qualified Au despositing layer was obtained,w hich was satisfied for device bonding.3)Multiple metal layers for device bonding were prepared and deposited onto AlN submount by magnetron sputter, electroplating and thermal evaporating process. The soldering process of AuSn alloys for device bonding was studied and the soldering condition was optimized.4) Compare the prepared non-cyanide plating solution AuSn solder with the prepared cyanide plating solution AuSn solder, direction of development of improved. |
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