Study On Packaging Technology Of High Power Single Emitter Semiconductor Laser

Packaging technology is a key link for high-power semiconductor lasers in theproduction process. Packaging quality directly determines the characteristicsparameter, reliability and lifetime of the device. In order to improve the thermalperformance of the laser, reduce packaging stress, and improve the packaging quality,the976nm single emitter semiconductor lasers have been studied. By experiments, thethermal and thermal stress problems of the semiconductor lasers have been solved.Main work is as follows:1）By ANSYS software, the finite element analysis of the thermal and thermal stresshas been studied. And the influence of AlN and InSn solder thickness on temperatureand thermal stress of the devices is investigated.2）In order to obtain high-quality gold-tin solder, the methods of layering platingAuSn has been studied. The composition of the electroplate liquid and processconditions has been optimized. By the methods of three layer plating, the uniformthickness and suitable composition gold-tin solder is obtained.3）In order to improve the thermal performance of the devices, effect of chip cavitylength on junction temperature and reliability of diode lasers was studied. The cavitylength is4mm, and the minimum junction temperature of devices is obtained and is56.3℃. When the heat sink temperature is30℃, the cavity length is4mm, the lifetime is determined to be>20000hours. Therefore,4mm should be used as the chipcavity length of10W single emitter semiconductor laser.4) To reduce packaging-induced stress, a method is developed for quantitativecalculating the stress by measuring the emission spectrum of the laser under pulseconditions. The results show that the solder quality is a critical factor affectingthermal stress. The difference of stress can exceed300MPa due to the difference ofsolder quality. By optimizing the reflow soldering curve of the laser, the stress of thelaser drops from129.7MPa to53.4MPa. This method can also effectively solve theproblem that the stress varies with storage time.