Study On Passivation Processing Of The Cavity Surface Of High Power LDs

With the development of science and technology, the demand in high power semiconductor lasers is growing rapidly, so the study of its reliability and increase its power output is very important.The results show that the laser cavity surface degradation is the main reason for generating degradation, especially with GaAs-based Al-containing high-power semiconductor laser cavity surface degradation is more serious.In this paper, we have studied 808 nm GaAs/AlGaAs quantum well semiconductor lasers and started our research from cavity surface degradation mechanism. We have proposed options to improve the laser cavity surface degradation, namely, passivation processing on the cavity surface.At last, the results show that the laser output power and reliability are improved.At first, we analyzed the surface properties of III-V compound semiconductor materials. Then, we analyzed the effect of surface state on cavity surface degradation of the high power semiconductor laser. We pointed out that is the non-radiation compound, results from surface state, is the main root of catastrophic optical damage.The research on the cavity surface passivation processing of the lasers.Based on GaAs (110) substrates, we have deeply discussecd wet passivation using the solution containing sulphur and dry passivation using a mixture of H2S and argon plasma. Processing of laser cavity surface coating, we study on the high reflective film and antireflection film technology.In a word,we have improved the reliability of high-power lasers and enhanced COD threshold by passivation technology of laser cavity surface and nonabsorbing window technology in this paper. These results are in favor of the applications of lasers on the condition of high temperature and high power.