Study On A-Si: H On Passivation Of The Cavity Surface Of High Power Semiconductor LDs

With the development of science and technology,the demand in high power semiconductor lasers is growing rapidly.However,when the optical power density of laser cavity surface is up to 6-15 MW/cm²,the catastrophic optical damage of the lasers may occur. For high power semiconductor laser,the catastrophic damage will seriously limit the output power and it's applications.For the purpose of improvement of power output characteristics,attempts were made to passivate facet by a Facet coating technique,which will increase the catastrophic optical mirror damage(COD) threshold.According to the principle of thin-film optics,we adopted a-Si:H and SiO₂ as coating materials,and designed the film structure.We studied facet coating technique by magnetron sputtering deposition equipment and obtained the optimized experiment condition by testing data analysis.We applied the optimized condition to lasers for high reflective film.we select a-Si:H and SiO₂ as high and low refractive index materials. Only prepared three pairs,reflectance is up to 97.79%at the 808 nm.The results of experimental imply that,we prepared a-Si:H/SiO₂ as high reflective film which not only can reduce the high reflective film cycle but also can get ideal laser output characteristics.