Study On Passivation Of Cavity Surface Of Semiconductor LDs

The passivation technology of the cavity surface of semiconductor lasers is mainly about :By means of drawing into the integration of certain atom and dangling bonds of cavity facet to form new and stable chemical bond, it refers to form a stable passive layer.This thesis hasⅢ-Ⅳcompound semiconductor laser as the research object, researching different passivation methods of the cavity surface of semiconductor lasers,such as sulfur-containing solution passivation,oxygen passivation,hydrogen passivation,nitrogen passivation and hydrogen sulfide plasma passivation. This thesis describes the background of the passivation technology and passivation process . Under different passivation conditions, we detailedly comparied the passivation impact of sulfur-containing solution passivation,nitrogen passivation,hydrogen sulfide plasma passivation. A variety of sulfur-containing solution passivated the cavity surface,that (NH₄)₂S + t-C₄H₉OH solution blunt of the best results; Passivation with nitrogen or hydrogen sulfide plasma, N₂ and H₂ flux ratio is 20:1, H₂S and Ar flux ratio is 1:1. The thesis summarized the problems of various passivation processes and feasible solution.