Study On1.55μm Semiconductor Laser With Fundamental Mode

A semiconductor laser which can be used in optical storage system, optical communication and pumping solid state laser is developed.1.55μm InP-based quantum well lasers have been designed and optimized for high power and single transverse mode into an optical system.Its mode characteristics are discussed. On the base of the theoretical analysis, a ridge waveguide and InGaAsP/InP material was chosen and the laser structure had been optimized and the mode characteristic was integrated, and some relevant laser process had been done.The targets that the semiconductor attained are:a ridge waveguide, using three75A-thick InGaAsP QWs. the optimum single transverse mode emitting condition has been obtained when ridge width is4μm and etched depth is0.6μm. It is realized that maximum output power providing up to100mW in single transverse mode. According to the designed semiconductor later,1.55μm InP-based quantum well lasers have been made. For800μm-long broad area lasers, the maximum output power is32mW with operating current of280mA, the threshold current is30mA.