Research Of Thermal Properties Of Vertical-Cavity Surface-Emitting Lasers Based On Ansys

Comparing with the conventional edge-emitting lasers, vertical-cavity surface-emitting lasers have many obvious advantages and become a hot research topic both at home and abroad. But the progress of the research on VCSEL is slow for the serious self-heating of VCSEL. The self-heating can increase the temperature of VCSEL device, and a great amount of heat reduces the performance of the device and limits lots of applications. Thermal problem has become a key difficult issue in fabrication of VCSEL.We analyzed the heat generation principle inside of the VCSEL in theory and influenced relationship between heat increasing and wavelength, output power, and threshold current. Radiation bridge electrode structure and AlxNy film passivation membrane structure were introduced to improve the temperature characteristic of VCSEL. Testing results show that when in the single-frequency work, the peak of emission spectrum is 983.42 nm. full width at half maximum is 0.92nm, and device has good monochromatic..and the threshold current is 390mA. When driving current is 1.8A, a maximum output power 730mW is obtained. We simulated the temperature field of installing patch and inversion patch of the device in ANSYS platform. The results show that thermal resistance of installing patch is 7.86℃/W, while it of inversion patch is 6.2℃/W, inversion patch improves the radiating performance of the VCSEL. According to the analysis results, the 980nm VCSEL single pipe was prepared by inversion patch method; This paper also simulated the effects of heat sink dimensions to thermal resistance.