Research On The Lithography Process VCSEL

This article combine with the topic of"980nm model radiation bridge structure vertical cavity surface emitting lasers", in the first place,it elaborated the research of VCSEL and the application situation, as well as introducing the vertical cavity surface emitting laser structure characteristics in detail. Summary the process of the radiation bridge structure in whole, By the Optimization of photolithography process design of bridge structure, radiation lithography version, we reduce the internal Joule heat generated by the device.Analyze the VCSEL light-emitting principle and threshold condition. In the etching process, by changing the etching solution to achieve the elimination of "drill erosion angle " By use of scanning electron microscopy to test on the chip and get corrosion liquid selection and proportioning of chip corrosion depth, corrosion morphology rules, and gives the best corrosion rate. In conclusion, the device after introducing radiation bridge electrode, at the temperature of25°C,the current threshold has reached its lowest point, about360mA; device peak wavelength of983.42nm, half peak width is0.92nm. When the injection current is1.9A, the device output power maximum value reached to the top of710mW. The lightning conversion efficiency is24.98%...