Radiation-Bridge Surface-Emitting Laser Technology And Testing

Vertical cavity surface emitting laser (VCSEL) to its high cost, the advantages of high integration determines its high-speed parallel optical interconnects, broadband Ethernet, and other fields have been widely applied, become a new field of optical communication light source. To improve the vertical cavity surface emitting laser thermal properties and improve its optical properties, this paper proposes a new structure of the radiation bridge vertical-cavity surface-emitting lasers. Current use of radiation into the bridge-like channel structure replaces the traditional ring current injection channel VCSEL.This theoretical analysis of the new bridge structure VCSEL radiation threshold characteristics, thermal characteristics. Designed a new bridge structure of radiation VCSEL DBR mirrors required, identified the strain quantum well active region material composition, Determined the structure of epitaxial films, by molecular beam epitaxy (MBE) growth of epitaxial wafers completed. This restriction on the oxide and the etching process was optimized to obtain the ideal conditions. By lithography, etching, oxidation, thinning, coating and other processes to produce the N face the light of new radiation bridge structure 980nm VCSEL device.Bridge structure on the radiation characteristics of VCSEL devices voltammetry, optical and electrical properties, optical properties, temperature characteristics and some relevant characteristics of the test. By comparison with the traditional VCSEL devices, the results show that the new bridge structure of radiation can reduce the threshold current VCSEL devices and the thermal resistance, improve the model characteristics of the device to improve the device's output power.