Components Pinhole Flaw Detector And Its Algorithm

The third generation imaging intensifier is a widely used vacuum optical imaging device which is used to enhance the faint image .It is one of the core low-light-level night-vision devices. The defects which are caused in the growth of GaAs epitaxial material and the process of cathode component have a certain impact on image quality of the third generation imaging intensifier .So high-quality GaAs epitaxial material is the first requirement of achieving high sensitivity cathode and the basis of improving the yield of imaging intensifier. Component-Pinhole Blemish Detector (CPBD) is designed in this assignment for study. The blemishes on the surface of GaAs substrate and cathode component can be detected automatically by CPBD. The statistical data of blemishes in different regions can be given. CPBD eliminate substandard products and improve the performance of component.This dissertation expatiates on the hardware architecture of CPBD, explains the architecture and functions of each hardware and also introduces the software modules of CPBD in details, describes the role of each module, realizes the interaction of hardware and software. Based on the principle of object extraction, the basic theory and methods of threshold segmentation are discussed in the paper. A detection algorithm of GaAs substrate and cathode component is proposed on this basis. An image mosaic algorithm of large number of images is proposed. Seamless mosaic by coordinate translation and image resizing is realized. A blemish integration algorithm is proposed in order to avoid miss counting which ??aused by a single blemish that strides across some images .At the same time, some ways are added to describe the blemish. Blemish details of GaAs substrate and cathode component can be gained accuracy and completely.A Friendly interface is designed in CPBD. The realization of computer automatic control greatly improves the efficiency and accuracy of detection and saves human resources. This will promote the preparation quality and efficiency of GaAs cathode component and speed up the research process of the third generation low-light-level devices.