The Half-bridge Driver Circuit Analysis And Design Of The Sub-module

Power IC can be clssified into two types, one of which is Smart Power IC, the other of which is High-Voltage IC. High-Voltage IC is monolithic intergration of High-Voltage electronic devices and traditional logical circuits of control or analog circuits. Power IC has been widely used in the fields of Motor Control, Electronic Ballast, Automotive Electronics, Flat Panel Display, Switching Power Supply, etc. Power IC is predicted to be the fastest developing and the most popular power semiconductor device.In this paper, we have analysised and designed a high voltage, high frequency half-bridge drive circuit suitable for power MOSFET and IGBT devices. First, the author introduced the types of Electronic Ballast and the diretion of its development. Second, according to application requirement, the author designed the overall structural design of circuit, analyzed and designed the core blocks which included Schmitt Trigger, Dead Time, Undervoltage Latch, the Signal Output of High-Low side, Pulse Generation Circuit, Level Shift, Pulse Filter and RS Trigger. Because of the restriction of condion, this paper only simulating the core blocks by using the simulation tool of Spectre on the base of completing principle analysis and circuit design.Because of the specificity of the High-voltage device in the drive circuit, this paper introduced node-terminal technology and isolation technology which were frequently used in LDMOS. And the author initially designed the LDMOS device proper for this circuit, and analyzed its frame.Based on standards technology of CMOS with P well, consulted with the universal BCD technology, combined with the circuit's specificity, the initial design of layout of the devices and circuit has been completed.