Cmos Model Parameter Extraction Method

For the Integrated Circuit design nowadays, the Computer Aided Simulation has been an indispensable tool. The Circuit Simulator is a design tool for IC at a relatively low level. It can provide most detailed simulation result of the circuit. If the Circuit Simulator can be used for IC design and analysis depends on device model, especially the accuracy and simplicity of the model, which would influence the accuracy and speed of the simulation. With the device dimension decreasing, the complexity of the device model increases obviously. Generally speaking, the more complex the model is, the more accurate it will be, and the more model parameter it needs.This paper chooses BSIM3 (Berkeley short-channel IGFET model) the model to be extracted, which is for short channel MOS Field Effect transistor specially. These works are presented in this paper.1. Following the instruction of BSIM3, a set of devices with orthogonal size was measured to get the needed data for parameter extraction.2. The DC parameters in BIMS3 were extracted by using three different methods: single model extraction, model-binning, multi model extraction. And the three methods are compared.During the process of model extraction, the optimization algorithm: Newton-Rufson iteration combined with least square law was used. Both of single model extraction and multi model extraction are based on physical scheme. Local optimization was used to extract different parameters in different region. According to the physical meaning of parameters, the sequence of parameter extraction was decided. Model-binning is based on empirical scheme, DC parameters were also extracted by using this method. Furthermore, the parameters related to junction capacitance were extracted in this paper.3. At the end of this paper the model parameters were verified, and the error value report was given, which is followed by the related comparison and analysis.Finally, the conclusion and some views about the research were presented.