.470-860mhz Broadband Power Amplifier Design

In modern wireless communication, high linear broadband amplifer is necessary and play a critical role, and even the whole communication system will be affected by its performance.This subject aim at designing a wide band and low noise figure middle power amplifer which frequency includes 470-860MHz,used in the TV Transmitter ,under the basic of analyzing and searching broadband matching technology. Theoretically several solutions are derived in the final scheme such as broadband matching technology which included negative-feedback technology, and balance technology. In addition, the design will be optimized by EDA software and the final test result indicates that our design is successful.First of all, The principle of microwave amplifier is introduced in this paper, especially its main parameters index sign and model setting of the GaAs MESFET. Subsequently analyzing the guidelines must be followed and the principle of broadband matching technology with GaAs MESFET. Then the main methods of realization are discussed.At last, the scheme of subject, the functional realization of the module using small-signal S-parameter, some questions which must be pay much attention in the system design, and the ultimate testing result of this subject is represented and analyzed in detail.