Research And Design Of CMOS RF Amplifier Based On 5G Application

Mobile communication has gone through five generations in recent years,and it is easy to see from its development history that mobile communication is moving towards high frequency bands and large bandwidth trends.In addition,user demand for multiple services is forcing communication standards to continue to increase.In the new era of 5G,where everything is connected,the RF front-end plays an important role in the communication system as a key hub for communication with the outside world.Compared to conventional RF front-end circuits consisting of multiple links compatible with multiple communication standards,broadband RF front-end circuits that are compatible with multiple communication standards offer significant advantages in terms of miniaturisation and low cost.Therefore,it is important to study broadband RF front-end circuits compatible with multiple communication standards to accelerate the layout of the 5G Internet of Everything scenario.Among them,the research and design of wideband Low Noise Amplifier（LNA）and wideband Power Amplifier（PA）,as the core modules of wideband RF front-end,are important to promote the development of wideband RF front-end.The main research content of this paper is as follows:1.Based on the research background that broadband RF front-end circuits have an active role in accelerating the development of 5G,the current status of domestic and international research on broadband low-noise amplifiers and broadband power amplifiers in broadband RF front-end is investigated.In addition,the basic theory of RF amplifiers is introduced,and the key indicators of low-noise amplifiers and power amplifiers are studied and analysed.2.Based on TSMC 0.18μm CMOS process,a broadband LNA covering 0.5～9.2 GHz has been designed,and the layout design and post-simulation verification have been completed,with a layout area of 0.28 mm².The amplifier is composed by a two-stage amplification structure,combining the use of inductor peaking,current multiplexing,resistor parallel feedback and pseudo-resistance techniques.The introduction of a pseudo-resistor structure to reduce the resistive noise of the first stage input tube is one of the innovations in this paper,and this structure improves the overall circuit noise performance by about 8%.Simulation results show that the broadband LNA has an input and output reflection coefficient<-10dB,a gain of 14.2±0.2dB,an NF<3.97dB,an IIP3of-9.2dBm@5GHz,and a total power consumption of 12.9mW with a 1.8V power supply in the frequency range of 0.5～9.2GHz.3.Based on TSMC 0.18μm CMOS process,a wideband PA covering 2～4 GHz has been designed and verified with a layout area of 0.49 mm².The wideband power amplifier consists of a driver stage,power stage,matching network and bias circuit.A self-biased common source and common gate structure is used as the drive stage circuit of the PA.This structure utilises a self-biased RC circuit to achieve a filtering function that reduces the gate drain voltage swing and increases the tube’s voltage tolerance.The power stage uses a conventional common source amplifier structure.Simulation results show that the broadband PA has an input reflection coefficient of<-11dB,a power additive efficiency of24%@3GHz,a power gain of 21.5dB@3GHz,anOP_1dB of 10.7dBm@3GHz,and a total power consumption of 45mW from a 1.8V supply in the frequency range of 2 to 4GHz.