Theory Research And Design Of X-band Wide Band High Power Series Amplifiers

Compared with the vacuum tube amplifier, the solid state power amplifier have the advantages of high reliability, low operating voltage, graceful failure, etc. In recent years the low-band solid state PA has already been widely used, however, its applications is limited by the low output power at X band. So research of high power solid state amplifier at X band is very meaningful.Recently the transistor used at X band solid state PA is mainly GaAs FET. The key design technology of high power amplifier are the design of GaAs FET amplifier and power combiner. Based on the features of GaAs FET, at first this thesis introduces the design methods and theories of single-stage PA, expounds the design methods and demands, and introduces a common used supply power modulating circuits. Secondly common power combining techniques are analyzed and compared. After that the high power solid state amplifier is designed. Microwave CAD software is used to simulate and optimize all microwave circuits, simulating data and test results are presented. The results prove that power amplifiers can meet the demand of specifications, which can provide references for future engineering applications.