A 10w Semiconductor High-power B Output Stage Of The Design

The power integrated circuit belongs to a device of important electronics, Uses for to output each kind of change the power signal in order to impetus load work.. The power dissipation of power IC is high, The power that device consume is more high, the temperature of chip is more high, the radiation is the main barrier which this kind of electric circuit develops. Therefore the good hot design to guarantees the electric circuit each performance index count for much,This topic design semiconductor high power output, not only can obtain the high efficiency output, and the electric circuit can from the examination temperature of chips, when the temperature achieved when certain degree, the starting capacity heat leading reduces temperature of chips, realizes from the protection.This text mainly studies the high power operation amplifier, adopting a normal bipolar regulations of 5um lithography precision, passing through circuit design, circuit simulation, layout design and layout validation. Has designed the assistant module in the electric circuit structure, can carry on to the power output stage main circuit module heat leading. The all simulation result are satisfied with design need, the power amplifier simulation results indicate that it exports10W power. In this thesis ,made sure and draw the layout graphics of each isolation devices, and carry through the DRC and LVS verification, the verification result show the layout obey the technology rules, and accord with circuit structure.