| With the rapidly development of large scale integrate circuit, single crystal silicon wafers, as the commonest semiconductor material, are applied comprehensively to the manufacture process of IC.but low productive efficiency, bad surface integrity, high produced cost and machining damage had holdbacked the wider application of single crystal silicons in IC. A new cutting technology of using electroplated diamond endless wire saw (EDEWS) was applied in this paper to cut single crystal silicon.A appropriate finite element analysis model is built up based on experimental data. Researched the ralationship between cutting force,material damaged zone and cutting factors, and predictions of cutting force and material damaged zone are conducted under different conditions.The finite element analysis model of a single diamond grain was constructed fistly based on cutting pricinples of wire saw. Then, several special finite element techniques are deeply investigated, such as the meshing, contact and friction, the chip formation, the chip separation criteria and so on. The thesis carried out some finite element simulations by varying geometric parameters of the wire and cutting parameters, through which the thesis researched the relationships between indentation depth, cutting force and cutting factors. Simultaneiously a prediction of cutting forces was performed successly.Based on the cutting forces of single diamond grain, a cutting simulation of several diamond grains was conducted, and analyzed the relationship of damage depth and cutting factors by coupling shear stress field of several grains. Then a prediction of damage depth was conducted so as to instruct practical cutting, decrease damaged zone, improve productive efficiency.The cutting experiments of single crystal silicon were performed by using EDEWS ,and applied experimental data to finite element simulations,compared experimental results with simulation results, consequently approved the validity of... |
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