Study On The Cutting Mechanism Of Resin Diamond Wire For Silicon Crystal

With the development of solar photovoltaic industry,the application of silicon crystal materials is more and more extensive.Silicon wafer cutting is an important technology in photovoltaic industry.The quality of silicon wafer directly affects the subsequent processing cost.The cutting mechanism of cutting silicon crystal with resin diamond cutting line and the factors that affect the quality of silicon wafer during silicon cutting can provide theoretical guidance for the formulation of cutting process.The removal mechanism of silicon crystal material was studied.The silicon chip and chip morphology after cutting were observed by electron scanning microscope.The removal form of silicon crystal was studied.The critical depth of plastic removal of silicon crystal was calculated.The effect of different cutting parameters on the mechanism of silicon crystal removal was studied.A large number of micro cracks exist on the surface of the silicon wafer after cutting.The surface roughness of silicon wafer decreases with the increase of the line velocity,and increases with the increase of the feed speed.The depth of the section micromethod is used to study the subsurface damage depth of the silicon wafer with different cutting parameters.The influence.For the first time,a cutting model of resin diamond cutting line and a resin layer withdrawal model of single diamond were established for the first time.By analyzing the yield line of resin layer,the relationship between yield and delta A is obtained.Theoretical studies have shown that when the resin diamond cutting line is cut,the increase of the bow is mainly caused by the yielding of resin layer.The change of the bow line is directly proportional to the yield of resin layer.In the experimental study,2different hardness resins were selected and the single crystal silicon was cut by the same cutting process.The experimental study showed that the wire saw could reducethe wire bow and improve the cutting efficiency by using the resin diamond wire saw with high hardness.For the first time,a single diamond particle cutting silicon crystal is simulated by finite element method.The simulation of the air convection and the convective heat transfer coefficient of the cutting fluid is considered,and the interaction between the stress field and the temperature field is considered synthetically,and it is a simulation simulation of the thermal coupled cutting.The factors that influence cutting force and cutting heat are studied.The research results show that the greater the cutting depth,the greater the cutting force and the higher the temperature.The higher the cutting speed,the smaller the cutting force.The wear form of resin diamond cutting is studied by scanning electron microscope.The wear of the resin diamond cutting line mainly includes the wear of resin layer,the polishing wear of the diamond particles,the drop of the diamond particles,and the finite element model of the single resin diamond particles is set up.The force condition of the single resin diamond particles is analyzed by the finite element method.From the analysis results,the close proximity of the diamond particles is analyzed.The displacement of the resin layer of diamond particles is larger and the displacement of the resin layer away from the diamond particles gradually decreases.Therefore,the resin layer of the diamond root is easily cracked under the action of alternating stress,and it is easy to produce the gap between the diamond particles and eventually fall off.