W-band Planar Hybrid Integrated Voltage Controlled Oscillator Study

Millimeter-wave oscillators are hearts of millimeter-wave systems, and key components of millimeter-wave systems for radars, communications, electronic-wars and so on. Today, millimeter-wave systems are expected to be more and more compact and light, so reduction of both dimensions and weight of the circuits is facing challenges. Meanwhile, the need of systems'integration is more and more imperious. We have realized that millimeter-wave circuits and systems were used in armament and national defense, so some other countries, especially the stronger in military affairs, on the one hand do their best to develop millimeter-wave technique by themselves, on the other hand prohibit the technique from exporting to china, such as systems, circuits, devices, components and so on. On this special situation it is rather important to exploit millimeter-wave circuits and systems by ourselves.In this paper, the models and parameters of Gunn, varactor and ribbon bond are shown. While simulating the resonant circuits, we finished a microstrip resonance, which has high Q-factor and fits to design W-band low phase noise oscillators. Select beam lead hyperabrupt junction varactor and Gunn die made in china as VCO's frequency turning component and minus resistance. Correct simulation method is deduced from the principle for negative resistance oscillator. Parallel resonating analysis in ADS for the VCO is presented to make sure it will oscillate in the assumable frequency range. Moreover, the microstrip-waveguide transition and the circuit for DC bias in the VCO are analyzed, and the analysis is generally useful for design of millimeter-wave planar circuit. Finally a W-band microstrip integrated Gunn VCO is designed completely and tested. The phenomenon of frequency excursion and reduction of power output are analyzed and discussed separately in the end of paper and some suggestions for further research are given.Results indicate that its oscillating frequency range is from 98.3GHz to 100.6GHz, turning sensitivity is about 400MHz/V, linearity excels 3.6% and largest output power is 0dBm with ripple of 1 dB.