Numerical Simulation Of Three-channel Bccd In The Optical And Electrical Properties Of The Near Infrared Region

As a new photoelectric imaging device, the charge-coupled device (CCD) is much better than other imaging devices. And it is widely used in many fields, such as spaceflight , remote sensing, industry and communication, and so on. The application of CCD is very important in infrared imaging system recently. We have studied the model of three-channel bulk CCD (including a surface n channel, a bulk p channel and a bulk n channel) developed by V.I.Khainovskii and V.V.Uzdovskii ,and simulated the photoelectric characteristics of silicon BCCD in the region of optical radiation and germanium BCCD in the region of near-IR .The results show that the positions of the maxima of spectral photosensitivity for silicon BCCD are at 0.5μm,0.67μm and 0.83μm, respectively .But the germanium BCCD can't be used for multispectral imaging in the region of near-IR .By changing the parameters of BCCD, the author found that improper absorption coefficient curve of germanium is the main reason. The curve of absorption coefficient of a new material was obtained by means of tryout .The maxima of the spectral photosensitivity of the three channels of the BCCD made of the new material are at 1.0μm ,1.1μm and 1.26μm, respectively in the region of near-IR. This research is helpful for the fabrication of BCCD which can realize multispectral imaging in the region of near-IR.