.0.87 ¦¬m In Pulsed Diode Laser

Pulse semiconductor lasers operating in the range of 0.84~0.90um can be used in the systems of laser measure, laser detonator,short -range communication,etc..Now much research efforts are focused on reducing the threshold current density, increasing the differential efficiency and output light power of the semiconductor lasers,which are used as light sources in the system that have to meet demands of portability and miniature,while the bulk semiconductor lasers by the conventional LPE fabrication don't meet the needs of the development.The semiconductor QW lasers have been applied to improve many of device characteristic single TE fundamental transverse and lateral modes are more readily realized in QW lasers for their ultrathih active layers and anisotropic optical transition matrix elements;The most successful improvement in this field is the drastically reduction of lasing threshold;The T0 of GaAlAs/GaAs QW lasers is increased to more than 200K,about 2-fold of DH lasers due to the step-like DOS; High laser output power of QW lasers have been realized. The GaAlAs/GaAs QW lasers of the state-of-art work in the wavelength range of 0.78-0.8 l(am.But this kind of QW lasers still remain to be improved in such parameters as threshold current density, differential efficiency and lifetime.Dealing with the problems relating these parameters are main efforts of the author.In this paper, a procedure of the 0.87um pulse semiconductor laser is discussed specially .The Confined states, density of states and populations on confined states in QW are given by analysis. The profitable deduction and calculation for confinement factor, waveguide model, model refractive index, farfield angle are shown by the methed of lamination-iteration and the extended parabolic approximation. We focus on the design of parameter and structure of the device, and on the technology of material growth, ohmic contact, mirror facet coating. The optimum structure and technology parameters are given on the basis of synthetical analysis and calculation of laser's important characteristics, such as gain .critical thickness, peak wavelength, threshold current density, output power and so on. Used graded-index separate-confinement heterostructure (GRIN-SCH) InGaAlAs/GaAs ridge waveguide(RWG) strained single-quantum-well(SQW), which active region In and Al mole fraction are 0.13, 0.09, respectively. The cladding layer Al mole fraction is 0.60, thickness of the well is 8nm, cladding thickness is l.Sum.Width, height and length of ridge waveguide are 300um, 0.9um and 1000u.m, respectively. We obtained the devices with 0.87 + 0.03um lasing wavelength ,more than 30W peak output power(I=10A,f=100kHz, T =50ns), less than 4nm spectral linewidth. Finally its reliability and photoelecteicity characteristics and curve are given.The fabricated devices demonstrated performances as expected.Up till now the author didn't find any reports on the high repetition frequency and power array laser emitting at 0.87 ?0.03um The author proposed a design of GRIN-SCH InGaAlAs/GaAs RWG strained SQW lasers for the first time in the home country, and manufactured the 0.87um pulse semiconductor lasers , and determined the optimal process parameters for mirror facet coating ,and introduced the innovative p-side enhancement process which resulted in reduced contact resistance , more reliable soldering and better fabrication efficiecy in the manufacture of the 0.87um pulse semiconductor lasers.