InP Based InGaAlAs/InGaAsSb Strained Quantum Well Laser Materials And Design

The present thesis analyzed theoretically the basic properties of InP based arsenides and antimonides,including the crystal constants,Band gap energies of InGaAlAs,InGaAsSb quaternary materials,with the bowing modifications taken into consideration.Effective Mass models and 4×4 Luttinger-Kohn Hamitonian matrices have been adopted to analyze and optimize the energy structure,lasing wavelengths of InGaAlAs/InGaAsSb strained quantum well systems.Mechanical equilibrium model has been adopted in the calculation of critical thickness of the strained material system.Through these theoretical analyses,the laser structure and parameters have been optimized.As is well-known,InP-based semiconductor lasers play an important part in fiber optical communications,and some high quality single mode laser diodes in the 1.3μm and 1.55μm wavelength range have been commercialized.Though InP based InGaAlAs/InGaAsSb strained quantum well materials have relatively narrow wavelength range(1.6～2.5μm),they have some unique advantages in better substrate quality and device technology,compared with GaSb based materials,attracting more and more attention.In adopting InP based substrate to study epitaxial growth and laser structure,not only very rich experiences can be exploited in material epitaxy and laser device technology using InP substrate,important part can be played in future optoelectronics integration.So this thesis mainly focuses on the material design,epitaxial growth and characterization of InGaAs, InAlAs,InGaAlAs and InGaAsSb with InP as substrate.A series of single epitaxial layers have been designed and grown,such as InGaAs,InAlAs,InGaAlAs,InGaAsSb adopting Solid Source MBE(SSMBE)systems.Surface morphology,interface property,crystal quality and light emitting properties have been studied in detail,showing that good substrate condition and suitable growth temperature are the pre-requisite condition for high quality epitaxial growth.In the present study,high quality single crystal InGaAs,InAlAs,InGaAlAs and InGaAsSb materials have been obtained by optimizing the growth parameters using SSMBE.On the basis on single layer growth and property optimization,InGaAlAs/InGaAsSb single quantum well structures have been grown preliminarily,and their light emitting properties have been studied.The present work has laid the foundation for high performance InP based Antimonides semiconductor laser fabrication.