.1.05 ¦¬m High-speed Broadband Laser

In this letter, a procedure of the modulation bandwidth and high speed laser diode modules operating at I .054j.im wavelength are described. Based on the theoretical analysis about the bandstructure, density of states, critical thickness, spectral linewidth and modulated bandwidth of quantum well and strained quantum well, we focus on the design of structure and material parameter, wavelength calculation and wavelength control in technological process. Then, under existing technological equipment conditions, the technological process of fabrication of ridge waveguide, ohm contact and bounding are optimized. Finally optical and electrical characteristics and its analysis are given. Used graded-index separate-confinement heterostructure (GRINSCH) InGaAs/GaAs ridge waveguide (RWG) strained single-quantum-well (SQW), which active region lnAs mole fraction x is 0.35, cladding layer Al mole fraction y is 0.65, thickness of the well is 5.Snm, cladding thickness is 0.45km, width and height of ridge waveguide are 3 l.tm and 0.5 urn, we obtained l.054um?.00I um lasing wavelength, more than 0.5mW output power, less than 2nm spectral linewidth, more than 3GHz modulation bandwidth.