980nm High-Power Semiconductor Laser

The InGaAs/GaAs strained quantum well lasers are able to work with extremely low threshold current density,high characteristic temperature and high COD limit,which make Ld lasers achieve higher output power and longer Ufe.Therefore,InGaAs/GaAs strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers.High power semiconductor laser arrays grown by MBE have been prepared in this paper. The epitaxial struture for LD is an InGaAs/GaAs/AlGaAs SSQW GRIN SCH structure and the width of the array bar ia 4mm. The low theshold current 2.9A the output power 20W at 17.5A have been achieved by SiOi isolation,ohmic contact and facet coating processes. The central wavelength is 979nm.At the same time,model analyses on the structure of the SSQW LD and the fabrication processes have been made for further research.