The Design Of High Characteristic Temperature And High Power Strained Quantum Well Semiconductor Lasers

The main direction of lasers' development is the high-power semiconductor lasers.In the course of injection current to the semiconductor lasers active layer which will produces amount of heat . The problem of dissipate heat is an important factor which confines the development of high power semiconductor laser.With the increase of the power that the high-power semiconductor lasers which confront to the main problem is the sensitivity to temperature ,it is the characteristic temperature (T₀).The thesis that the design of high characteristic temperature and high power strained quantum well Semiconductor lasers set out from the quantum well semiconductor structure ,which analyse the effect factor to T₀ in the physical abstract and parts of fabric. The design and fabrication of AlInGaAs/AlGaAs/GaAs squeezed strained quantum well semiconductor lasers are developed in this paper for settling the problem. The highest operation temperature is 60℃ , that the output power is over 1w in room-temperature, the lowest threshold current is 0.29A, it has primely reduce the lasers sensitivity to temperature.